Datasheet EPC2361 (Efficient Power Conversion) - 2

eGaN® FET DATASHEET
EPC2361
Dynamic Characteristics# (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance 4094 CRSS Reverse Transfer Capacitance VDS = 50 V, VGS = 0 V 12 COSS Output Capacitance 1147 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 1) 1398 VDS = 0 to 50 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 2) 1726 QG Total Gate Charge VDS = 50 V, VGS = 5 V, ID = 50 A 28 QGS Gate-to-Source Charge 7.2 QGD Gate-to-Drain Charge VDS = 50 V, ID = 50 A 2.5 nC QG(TH) Gate Charge at Threshold 4.9 QOSS Output Charge VDS = 50 V, VGS = 0 V 86 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. All measurements were done with substrate shorted to source. Note 1: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50 V. Note 2: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50 V.
Figure 1: Typical Output Characteristics at 25°C Figure 2: Typical Transfer Characteristics
500 500 25˚C 400 400 125˚C VDS = 3 V DS 300 300 200
– Drain Current (A)
V
– Drain Current (A)
200

GS = 5 V
I D
VGS = 4 V
I D
VGS = 3 V 100 V 100 GS = 2 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 3: RDS(on) vs. VGS for Various Drain Currents Figure 4: RDS(on) vs. VGS for Various Temperatures
10 10
)
I
Ω
D = 25 A
)
I
Ω
D = 50 A 8 25˚C I 8 D = 75 A 125˚C
ance (m
ID = 100 A
ance (m
ID = 50 A 6 6
ce Resist ur ce Resist ur So So to-
4
to-
4
– Drain- – Drain-
2

2
R DS(on) R DS(on)
0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
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