eGaN® FET DATASHEETEPC2361
Figure 10: Normalized Threshold Voltage vs. Temperature Figure 11: Safe Operating Area1000 1.4 1.3 ID = 15 mA 100 Limited by RDS(on) 1.2 1.1 1.0 10 0.9
– Drain Current (A)Pulse Width 0.8
I D1 ms 1 100 ms
Normalized Threshold Voltage100 µs 0.7 10 ms 1 ms 10 µs 0.6 100 µs 0.1 0 25 50 75 100 125 150 0.1 1 10 100 1000
TJ – Junction Temperature (°C) VDS – Drain-Source Voltage (V) T = Max Rated, T = +25°C, Single Pulse J C Figure 12: Transient Thermal Response Curves Junction-to-Board1
Duty Factors: 0.5 0.2 0.10.1
0.05 Thermal Impedance 0.02 T ed 0.01 PDM tp0.01
ormaliz Single Pulse , N Notes: ZθJB Duty Factor = tp/T Peak TJ = PDM x ZθJB x RθJB + TB0.00110-5 10-4 10-3 10-2 10-1 1 10
tp - Rectangular Pulse Duration (s) Junction-to-Case1
Duty Factors: 0.5 0.2 0.10.1
0.05 0.02 Thermal Impedance 0.01 T ed P Single Pulse DM tp0.01
ormaliz , N Notes: ZθC Duty Factor = tp/T Peak TJ = PDM x ZθJC x RθJC + TC0.001 10-5 10-6 10-4 10-3 10-2 10-1 1
tp - Rectangular Pulse Duration (s)EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2024 | For more information:
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