MB2M, MB4M, MB6Mwww.vishay.com Vishay General Semiconductor 10 30 T = 25 °C J 25 f = 1.0 MHz T = 150 °C V = 50 mV J p-p rrent (A) sig u 1 T = 25 °C J 20 ard C rw o 15 s F u 0.1 10 nction Capacitance (pF) u Pulse Width = 300 µs J 5 1 % Duty Cycle Instantaneo 0.01 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Forward Voltage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 T = 125 °C 10 J erse Leakage v 1 s Re u rrent (µA) u C 0.1 T = 25 °C J Instantaneo 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONSin inches (millimeters)
Case Style MBM0.161 (4.10) 0.144 (3.65) 0.190 (4.83) 0.179 (4.55) 0.205 (5.21) 0.195 (4.95) 0.049 (1.24) 0.106 (2.70) 0.039 (0.99) 0.090 (2.30) 0.148 (3.75) 0.016 (0.41) 0.132 (3.35) 0.006 (0.15) 0.029 (0.74) 0.147 (3.73) 0.028 (0.71) 0.017 (0.43) 0.105 (2.67) 0.137 (3.48) 0.020 (0.51) 0.095 (2.41) 10° to 15° Revision: 15-Jul-2020
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