Datasheet Infineon IRF9395M — Даташит

IRF9395MPbF
DirectFETВ™ dual P-Channel Power MOSFET В‚
Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max В±20V max 5.3mО©@-10V 9.0mО©@-4.5V Applications
l Isolation Switch for Input Power or Battery Application Features and Benefits Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 32nC 15nC 3.2nC 62nC 23nC -1.8V Q1-Q2 l Environmentaly Friendly Product
l RoHs Compliant Containing no Lead, G no Bromide and no Halogen
l Dual Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on) D G S S S S D DirectFETВ™ ISOMETRIC MC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ВЃ
SQ SX ST MQ MX MT MC MP Description
The IRF9395MTRPbF combines the latest HEXFETВ® P-Channel Power MOSFET Silicon technology with the advanced
DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
Orderable part number Package Type IRF9395MTRPbF
IRF9395MTR1PbF DirectFET Medium Can
DirectFET Medium Can Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel …